Laboratoire de Physique et Chimie de Nano-Objets
Institut National des Sciences Appliquées
135 avenue de Rangueil, 31077 TOULOUSE CEDEX 4 - FRANCE
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135 avenue de Rangueil, 31077 TOULOUSE CEDEX 4 - FRANCE
Tél : 00 33 05 61 55 96 51 | Fax : (+33) (0)5 61 55 96 97
Accueil du site > LPCNO > Publications > Articles > 2005 > Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a SiO2 layer obtained by low energy ion implantation.
J. GRISOLIA, M. SHALCHIAN, G. BENASSAYAG, H. COFFIN, C. BONAFOS, C. DUMAS, S. M. ATARODI, AND A. CLAVERIE.
Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a SiO2 layer obtained by low energy ion implantation.
Solid State Phenomena Vols, 108-109, pp 71-76, 2005.
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