Laboratoire de Physique et Chimie de Nano-Objets
Institut National des Sciences Appliquées
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135 avenue de Rangueil, 31077 TOULOUSE CEDEX 4 - FRANCE
Tél : 00 33 05 61 55 96 51 | Fax : (+33) (0)5 61 55 96 97
Accueil du site > LPCNO > Publications > Articles > 2006 > Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers.
H COFFIN, C. BONAFOS, S. SCHAMM, N. CHERKASHIN, G. BEN ASSAYAG, A. CLAVERIE, M. RESPAUD, P. DIMITRAKIS, P. NORMAND
Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers.
J. APPL. PHYS., 99, 44302 (2006)
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